ECC and bad block management section and the specific implementation of that are given through the study of bad block characteristics of Flash chip. 通过对Flash芯片中坏块特点的研究,引入了ECC校验以及坏块管理部分,并给出了具体实现方案。
The number of times each block erase is limited, usually about 1 million times, if a block erase beyond the limit, there have bad blocks, if there are a number of bad blocks in the flash it was broken. 而每个块的擦除次数是有限的,一般是在100万次左右,如果某块擦除超出极限,就出现坏块,出现多个坏块闪存即不能使用。
Bad master! Why shock me with that flash? 无良主人!干嘛拿闪光灯闪我?
After bad blocks have been identified, they are marked within the flash itself in a bad block table. 识别出坏块后,将在flash内部将这些坏块标记到一个坏块表中。
In bad block management method, the detected effectively block address is stored in the built register, which can save FPGA internal resources and accelerate the speed of operation of the NAND Flash. 在坏块的管理方法中,采用先将检测到的有效块地址存储在已建数组当中的方法,可以节省FPGA内部的资源,并可以加快对NANDFlash的操作速度。