The minimum resistance thus arises from a combination of weak localization and interaction effects. 关注弱势群体&访联合国开发计划署驻华代表莱特娜电阻最小值正是由弱定域化和相互作用共同作用的结果。
Effects of Weak Localization(WL) and Interaction in Disordered Metallic Thin Films 无序金属薄膜中的局域化和相互作用效应
The data of magnetoresistance can be accounted for by the contributions from the quenching of superconducting fluctuation and weak localization. 磁阻的测量结果可以通过超导涨落和弱定域化两个效应的贡献来解释。
The electron weak localization effect and the electron-electron interaction play important roles in the electrical transport properties of Cu-Zr amorphous thin film. 电子的弱局域效应和电子&电子之间的相互作用在Cu-Zr非晶金属薄膜的电输运性质中起着非常重要的作用。
The results show that there is a common regularity in these typical Zr-based glassy metals, In 10K weak localization theory. 实验指出,这两组典型的Zr基金属玻璃的电子输运性质,有着共同的规律性.分析表明,在10K弱局域化理论来解释;