Studies of single chamber, double junction, parallel substrate manufacturing technology of solar cell 单室、双结(DJ)太阳电池平行基片制造技术研究
The design and fabrication of InGaP / GaAs double junction tandem solar cells are reported in this paper. Efficiency between 22 % - 24 % ( 1AM0, 28 ℃) and filling factor around 80 % have been measured. 本文报道了我们设计研制的InGaP/GaAs双结(DJ)太阳电池,电池的转换效率在22%~24%之间(1AM0,28℃),填充因子约80%。
Numerical Analysis for Resolution on Color Difference of Polychromatic Light by Silicon Color Sensor with Double Junction(DJ) 硅色敏器件对复色光色差辨识能力的数值分析
Feasible Analysis of Producing GaAs-Constant Current Source Diode of Double Junction(DJ) Type 研制GaAs&双结(DJ)型恒流源二极管的可行性分析
The transient response characters of DMOS at non-junction, single junction and double junction are obtained by the transient response numerical analysis result of the open and close state of the DMOS at different energy ion radiation. 借助对横向高压DMOS的关态和开态的不同能量粒子辐照瞬态响应的二维数值分析,获得了横向高压DMOS在双结(DJ)、单结和无结情况下的瞬态响应特性。