The pressure behaviors of electron-phonon coupling strength of N isoelectronic trap and effective radius of bound exciton are discussed. 讨论了N等电子陷阱的电声子耦合强度及有效束缚激子(BE)半径随压力的变化关系。
Quantum Dot Confinement Effect on the Ground State Energy and Binding Energy of a Bound Exciton(BE) 量子点限制对束缚激子(BE)基态能和结合能的影响
Radiative transition and energy transfer of bound exciton in gap : n crystals GaP:N晶体中束缚激子(BE)的辐射跃迁及其能量转移
Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in ⅲ - nitrides quantum dots III族氮化物量子点中类氢施主杂质位置对束缚激子(BE)结合能的影响