The defects distribution of SI-GaAs wafer using PL Mapping technique PLmapping技术检测大直径SI-GaAs晶片中缺陷分布
In this paper, the defects distribution of SI-GaAs wafer was studied using PL Mapping technique in detail. 采用PLmapping技术,检测6英寸SI-GaAs晶片的均匀性,从而得到样品中的缺陷分布状况。