This paper introduces the work principle and structure of new ultra-low voltage protection device, and the structure simulation. 介绍了一种新颖的超低压保护器件的工作原理、结构特点,并进行了器件结构模拟。
An ultra-low voltage, low power current reference was presented based on zero temperature coefficient ( ZTC ) bias point and temperature compensation. 利用零温度系数偏置点技术和温度补偿技术设计了一个超低压、低功耗的电流基准源。
Based on the PMOS bulk-driven technique, an ultra-low voltage operational amplifier is proposed. 基于PMOS衬底驱动技术,设计实现了超低压运算放大器。
Based on bulk-driven and resistive subdivision techniques, an ultra-low voltage CMOS bandgap reference using second-order temperature and current feedback techniques is realized. 采用二阶温度补偿和电流反馈技术,设计实现了一种基于衬底驱动技术和电阻分压技术的超低压CMOS带隙基准电压源。
Analysis of Bulk-Driven MOSFET and Design of Ultra-Low Voltage(ULV) Operational Amplifier 衬底驱动MOSFET特性分析及超低压运算放大器设计