In addition, the transient enhanced diffusion during the rapid annealing of boron implanted silicon has also been discussed. 本文还讨论了瞬态退火过程中的增强扩散效应。
At the same irradiation conditions, it is found that the existence of a SiO 2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. 在相同的辐照条件下,Si近表面区域中SiO2层的存在更有助于限制B原子的瞬间增强扩散。
The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. 结果表明,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散。
Study of Transient Enhanced Dopant Diffusion in Silicon and Proposed Limiting Methods Si中掺杂原子的瞬间增强扩散现象及抑制方法