Separate confinement heterostructure strained single quantum well materials were grown by the technology of metal organic chemical vapor deposition ( MOCVD ). 气相淀积(MOCVD)技术生长了分别限制应变单量子阱(SQW)激光器材料。
High Output Power CW Strained Single Quantum Well(SQW) Semiconductor Laser 连续波工作高功率应变单量子阱(SQW)半导体激光器
The condition that electron can be trapped in a single quantum well is obtained. 得到了电子被囚禁在单一量子阱中的条件。
A calculation method of strained single quantum well width is introduced. 研究了应变单量子阱(SQW)势阱宽度的计算方法,为应变单量子阱(SQW)的设计提供了理论依据。
The principle of single quantum well laser diode ( SQWLD ) was reviewed. 分析了单量子阱(SQW)激光器(SQW-LD)工作原理;