The incident angle dependences of the cross sections for single event upset and single event latchup are presented. 获得了单粒子翻转和单粒子闭锁截面与入射角度的依赖关系。
Single event upset rate analysis of SRAM / MOS equipments in satellite optical communication system 卫星光通信系统中SRAM/MOS器件的单粒子翻转率分析
Single event upset ( SEU ) induced by cosmic ray in electronic devices seriously imperils the safety of spacecraft. 单粒子翻转对应用在航天领域的电子设备的可靠性具有重大的影响。
Design of an Improved Single Event Upset(SEU) Tolerant Sequential Circuits 一种改进型时序电路单粒子效应容错设计
Expermental methods were emphatically described for measuring the proton Single Event Upset(SEU) ( SEU ) cross section in Static Random Access Memories ( SRAMs ). 描述了测量静态随机存取存储器质子单粒子翻转截面的实验方法。