The reflection high-energy electron diffraction ( RHEED ) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition ( ECR-PEMOCVD ) system designed by us was used to monitor the GaN growth process in-situ. 通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)系统上装配反射高能电子衍射仪(RHEED),对外延GaN生长过程进行原位监测。