Because of large leakage sol-gel ITO film can not be used as top electrode for sol-gel PLT and PZT. 因漏电太大,sol-gelITO也无法作sol-gel铁电膜(如PLT,PZT)的上电极。
Some kinds of ferroelectric materials and electrode materials are investigated and compared. The bottom electrode in our design is Pt / Ti and the top electrode is Pt / TiN. 本文通过对各种铁电材料以及电极材料的研究分析,在电极的设计中采用Pt/Ti/SiO2/Si的下电极材料结构以及Pt/TiN的上电极材料。
It would be suitable for the top electrode materials of microcrystalline Silicon solar cells. 控制适当ZnO厚度,既能保持SnO2绒面效果,又可阻挡H离子对SnO2的还原作用,可作为微晶硅电池的前电极。
Comparing with the the normal process, the improved technology can keep the good contact interface between PZT film and the top electrode. 与传统工艺相比,改进后的工艺能保持PZT铁电薄膜与金属上电极之间良好的接触界面。
In this paper, we tried to understand the resistive mechanism through changing the device substrate and the top electrode materials. 本论文中试图通过在不同衬底上镀制ZnO薄膜,以及改变器件的顶电极(TE)材料,来了解电阻转换效应的机制来源。