The properties of Si epitaxial layer are investigated by XRD, XTEM and spreading resistance techniques. The results show that Si epitaxial growth layer is of good crystallinity and the same orientation with Si substrate and porous silicon layer. 对获得的外延层作了XRD、XTEM和扩展电阻等测量,测量结果表明硅外延层单晶性好,并和硅衬底、多孔硅层(PSL)具有相同的晶向。
An investigation on the lattice deformation of porous silicon layer was completed by means of symmetric and asymmetric X-ray double crystal diffraction. 利用X射线双晶衍射方法,对从同一Si(111)基片上切割的两块样品,在不同电解电流密度下,腐蚀形成的多孔硅层(PSL)相对于基体硅的晶格畸变进行了分析。
Observation and analysis of the crack phenomenon of porous silicon layer during storage in air 储存初期多孔硅膜龟裂现象的显微观测与分析
A New Method for Preparing Porous Silicon Layer(PSL) in Propyl Alcohol Hydrofluoric Acid Solution by Anodization 用HF-醇溶液法制备多孔硅的新方法
Specifically, how pore existing way, pore distribution and film thickness affect the thermal and mechanical properties of porous silicon heat-insulating layer is analysed and explained. 本文的研究内容是对多孔硅绝热层的热学和力学性质进行理论建模研究,分析和解释孔洞存在方式、孔洞分布情况以及膜厚对于多孔硅绝热层力学和热学性能的影响。