Typical field emission patterns of tungsten carbide thin film is observed, and its I V behavior and Fowler Nordheim(FN) plot is measured. 对碳化钨薄膜的场发射IV特性及FowlerNordheim曲线进行测量和计算;
A method is proposed for measuring the effective electron mass in the gate oxide in a thin MOS structure by using the extrema of Fowler Nordheim(FN) tunneling current oscillations. 给出了一种利用FN振荡电流的极值,测量电子在薄栅MOS结构的栅氧化层中的平均有效质量方法。
The field emission current density distribution over the tip surface was established using Fowler-Nordheim function, and the emission current over the single tip established by integrating the current density all over the single tip surface was 7 μ A. 由FowlerNordheim函数可得到尖锥表面的场致发射电流密度分布,对整个尖锥表面进行积分后得到了单个尖锥的场致发射电流约为7μA。
Based on the Fowler-Nordheim tunneling theory, a model for carriers transport and recombine in organic bilayer light emitting diodes ( LEDs ) is presented. 以在高场作用下载流子对三角势垒的FowlerNordheim隧穿理论为基础,建立了双层有机电致发光器件载流子的输运与复合发光模型。
The new memory cell is programmed by band to band tunneling induced hot electron ( BBHE ) injection method at the drain, and erased by Fowler Nordheim(FN) tunneling through the source region. 该结构采用带带隧穿热电子注入(BBHE)进行写编程,采用源极FowlerNordheim隧穿机制进行擦除。