Nanoscale CMOS Devices Realization with Micron Technology(MT) 微米工艺实现纳米级CMOS器件方法及技术研究
But on the same day, the board of Hynix, a cash-strapped memory-chip giant, shocked the markets by rejecting a proposed takeover by Micron Technology(MT), an American competitor. 但是,就在同一天,急需现金的存储类芯片巨人Hynix公司的董事会断然拒绝了美国的一家竞争对手美国美光科技公司的收购建议,此举令市场大为震惊。
Bulk silicon CMOS technology has always been the mainstream silicon microelectronics technology. With the CMOS technology into the deep sub-micron and even nano-era, how to make use of micron technology to achieve nanoscale CMOS devices, has become a hot spot in Si technology research. 体硅CMOS技术始终是硅微电子技术的主流,随着CMOS技术进入深亚微米乃至纳米时代,如何利用微米工艺实现纳米器件,成为Si工艺技术的研究热点。
In deep sub - micron technology, the mount of the static power catches up with the dynamic power gradually and the standby power is becoming an important factor in low power design. 进入深亚微米工艺后,静态功耗开始和动态功耗相抗衡,已成为低功耗设计一个不可忽视的因素。
Promotion of Design Flow of 0.9 Micron Technology(MT) 0.9μm设计流程的提升