In resonance conditions. voltage outputs of the vibration structures are up to 0. 4V, which can breakover double germanium diode adequately in rectification circuit. 该结构在共振条件下将运动信号转换为电压信号输出时,电压可达0.4V以上,足以开启双锗二极管进行电路整流。
Electron Resonant Tunneling in Double - Barrier Diode 电子在双垒二极管中的共振隧穿
The series resistance and cutoff frequency of double diffused parametric diode 双扩散参量二极管的串联电阻及截止频率
Temperature Dependence of Gain Spectra, Threshold Current and Auger Recombination in InGaAsP / InP Double Heterojunction Laser Diode InGaAsP/InP双异质结激光器中的增益光谱,阈值电流的温度特性及俄歇复合