The Research and Design of Low Noise Pre-amplifier Based on Field Effect Transistor(FET) 基于场效应管的低噪声前置放大器的研究和设计
This invention discloses a trenched metal oxide semiconductor field effect transistor ( MOSFET ) cell. 场效应晶体管(FET)以及制造场效应晶体管(FET)的方法。
An efficient, self-consistent method of Monte Carlo and Poisson equation is used to simulate the electrical characteristic of deep submicron metal-oxide-semiconductor field effect Transistor ( MOSFET ). 用蒙特卡罗-泊松方程自洽求解的方法,对深亚微米金属-氧化物-半导体场效应晶体管(FET)&MOSFET的电特性进行了模拟。
Study on Characteristics of Ferroelectric Field Effect Transistor(FET) with Pt / PZT / Pt Structure Pt/PZT/Pt结构铁电场效应晶体管(FET)性能研究
Microwave field effect transistor amplifier 微波场效应晶体管(FET)放大器