This paper introduces that we can reduce Within wafer nonuniformity ( WIWNU ) to achieve part and full planarization by distributing the speed of polishing head and polis. 介绍了在化学机械抛光过程中,可以通过抛光头与抛光台运动速度关系优化配置,降低晶片表面不均匀度,从而更好地实现晶片局部和全局平坦化。
The impurity of iron is one major heavy metal contamination on the silicon wafer. Surface photo voltage method ( SPV ) can be used to accurately measure the iron contamination within the silicon wafer. 铁杂质是硅片制造过程中常见的重金属沾污,表面光电压(SPV)法可很好地用于测定P型硅中铁杂质。
Chemical mechanical planarization ( CMP ) has gained wide acceptance within the semiconductor industry as the preferred method for controlling wafer topography. 化学机械抛光(CMP)在半导体工业内获得了广泛的赞同,对控制形貌起伏的硅片表面当作首选方法。