Vertical gradient freeze ( VGF ) technology is a proven technique for growing semiconductors composed of multiple elements that include : gallium, arsenic, indium, and phosphorus. 垂直倾斜结冰技术是被验证为成长半导体多样元素的混合,包括,锗,砷,铟和磷。
Total liquid encapsulated vertical gradient freeze ( VGF ) method has been used to grow undoped semi-insulating ( SI ) GaAs crystals. The impurities such as silicon and carbon have been well controlled in the growth process. 研究了非掺GaAs半绝缘单晶的液封垂直梯度凝固法(VGF)生长技术,解决了Si沾污和C浓度的控制问题,得到了直径2英寸非掺半绝缘低位错单晶。
Effect of Longitudinal Temperature Distribution on Interface Convexity in Vertical Gradient Freeze(VGF) Growth 静态温梯法中纵向温度分布对固液界面形状的影响
A vertical gradient freeze growth apparatus successfully were set up and Te-doped InSb single crystals were grown under an atmosphere without hydrogen. 本工作成功地建立一套垂直温度梯度凝固晶体生长设备,并在无氢气的气氛下生长了掺碲InSb体单晶。
A study on vertical gradient freeze technique of semi-insulating GaAs crystals 垂直梯度凝固法生长半绝缘GaAs单晶的工艺研究