Study of Low Temperature Far Infrared Absorption Spectrum on Thermal Donor(TD) and Shallow Thermal Donor(TD) in Nitrogen-Doped Silicon 微氮硅中热施主(TD)和浅热施主(TD)的低温远红外研究
The oxygen-related thermal donor can also be possibly understood as doubly charged donor. 利用类氢模型和有效质量理论拟会和计算,可以证明与氧有关的热施主(TD)很可能是双重电荷施主。
The results of shallow impurity P and thermal donor as well as deep im-purity Pd in Si using this method are consistent with those reported in the literatures. 首次将导纳谱方法用于Si中浅杂质P、深杂质Pd和热施主(TD)的测量,得到了和其它文献一致的结果。
The electronic structure of thermal donor in annealed silicon 硅中热施主(TD)的电子结构
Influence of Group ⅲ and Group ⅴ Impurities on Thermal Donor(TD) Properties in Silicon Ⅲ、Ⅴ族杂质对硅中热施主(TD)性质的影响