This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method. 介绍了直拉法生长单晶硅(SCS)的基本原理及工艺条件。
Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut. 晶锭-由多晶或单晶形成的圆柱体,晶圆片由此切割而成。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon ( sc-Si ) wafers by electroless deposition method. 采用无电镀沉积技术在经过机械抛光的单晶硅(SCS)衬底上沉积了铜纳米晶。
Effect of thermal ammonia pretreatment on nanostructure of nickel thin films on single crystal silicon substrates 高温氨预处理对单晶硅(SCS)衬底上镍薄膜显微结构的影响
Study on establishing and testing for ultra-precision machining single crystal silicon surface roughness of prediction model 单晶硅(SCS)超精密切削加工表面粗糙度预测模型的建立及试验研究