Research of SU-8 Resist Lithography Using Ultraviolet Laser 紫外激光曝光光刻SU-8胶的工艺研究
The simulation results show that the development profile of thick resist based on new exposure model is consistent with the experimental result, and the imaging mechanism of thick resist lithography is discussed. 模拟显示,用新曝光模型获得的厚抗蚀剂显影轮廓与实验结果吻合较好;并对厚胶光刻成像机理进行了讨论。
So its experiment process is different from that of traditional lithography technique and there are many complicated factors affecting the imaging quality in thick resist lithography. 在这种技术中,其实验工艺与传统的薄胶光刻工艺有所区别,影响厚胶光刻成像的因素也较为复杂。
Thick resist lithography is a kind of technique fabricating deep relief structures. Resist thickness used in the process usually is beyond 2 u m, even to hundred micrometers. 厚层抗蚀剂光刻是一种制作深浮雕结构的技术,所用的抗蚀剂厚度为2微米到上百个微米。
So developing an appropriate thick resist exposure model is important to study the transferring mechanism of figures in the resist and develop the whole thick resist lithography technique. 因此从理论上建立适于厚抗蚀剂光刻过程模拟新的理论模型对于研究厚胶光刻图形传递机理,发展厚胶光刻术有重要的意义。