Simulation results show that the high turn-on, offset, and saturation voltages of the practical device result from the high base sheet resistance and the nonohmic characteristics of the base contact, which are a reference for the device fabrication. 结果表明实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导。