The growth of silicon nitride films by using a diffusion furnace type plasma-enhanced chemical vapor deposition system 扩散炉型等离子化学蒸汽淀积系统生长氮化硅膜的研究
We prepared a-Si : H / SiO 2 multilayer by using layer by layer deposition of a-Si : H sublayer and in-situ plasma oxidation in the plasma-enhanced chemical vapor deposition system. 在等离子体增强化学气相淀积系统中,采用aSi:H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi:HSiO2多层膜。
The reflection high-energy electron diffraction ( RHEED ) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition ( ECR-PEMOCVD ) system designed by us was used to monitor the GaN growth process in-situ. 通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)系统上装配反射高能电子衍射仪(RHEED),对外延GaN生长过程进行原位监测。