Neutron transmutation doping of monocrystalline silicon 单晶硅中子嬗变掺杂(NTD)技术
In this article according to theory and technology of neutron transmutation doping, the factors ( hitting percentage and cross section uniformity ) which influence the percentage of finished product of FZ NTD silicon are analysed. 本文根据中子嬗变掺杂(NTD)的原理、工艺,着重分析了影响NTD硅成品率的因素:命中率及断面均匀性。
High precision trace neutron transmutation doping of DETECTOR-GRADE high resistance zone-refined silicon mono-crystal 探测器级特高阻区熔硅单晶的高精度微量中子嬗变掺杂(NTD)
Calculating of neutron transmutation doping for silicon in SPRR - 300 300反应堆单晶硅中子嬗变掺杂(NTD)计算
Neutron - transmutation doping for InP material 磷化铟材料的中子嬗变掺杂(NTD)