Chemical beam epitaxy, atomic layer epitaxy, migration enhanced epitaxy, selective area epitaxy, laser-assisted epitaxy and low temperature Si epitaxy are new ultrathin epitaxial techniques developed based on molecular beam epitaxy and metallorganic chemical vapor deposition. 化学束外延、原子层外延、迁移增强外延(MEE)、选择区域外延、激光辅助外延和低温Si外延等是在分子束外延和金属有机化学气相沉积基础上发展起来的几种新型超薄层外延技术。