The lightly doped drain MOSFET made basically by domestic equipment has been described. 本文描述了以国产设备为基础研制出的轻掺杂漏MOSFET。
Investigation of the Lightly Doped Drain(LDD) ( LDD ) MOSFET Technology 轻掺杂漏(LDD)MOSFET工艺研究
A new structure of gate_modulated lightly doped drain of TFT was proposed. It is very effective to lower gate_induced drain_leakage current of the TFTs when a higher source drain voltage is applied to it. 在进一步的研究中,设计了一种新型的栅控轻掺杂漏区(GMLDD)结构,有效地解决了在较高源漏电压下的栅诱导漏电问题。
The tested results indicated that the lightly doped drain MOSFET can resist the hot carrier effect and short channel effect effectively, and havs a fast speed. 测试结果表明,轻掺杂漏MOSFET能够有效地抗热载流子效应及短沟道效应,速度也较快。
For the purpose of reducing off-state current, lightly doped drain ( LDD ) structures were used in a p-Si TFT LCD. 针对多晶硅薄膜晶体管液晶显示器件关态漏电流较大的问题,采用源漏轻掺杂结构以降低关态时电荷的泄漏,增加晶体管的开关电流比值。