The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments. 本文提出了半导体锑化铟(InSb)单晶位错显示中对样品处理的一种新方法,并通过大量的实验证实了这种方法的可行性。
X-ray measurement of the thermal expansion of germanium, silicon, indium antimonide and gallium arsenide 锗、硅、锑化铟(InSb)和砷化镓的热膨涨&用X射线衍射法测量
Effect of chemical etch on the surface of indium antimonide 化学腐蚀对锑化铟(InSb)表面的影响
Infrared radiation measuring instrument uses infrared indium antimonide ( InSb ) detector to achieve the measurement. 红外辐照度测量仪采用红外锑化铟(InSb)(InSb)探测器来实现。
Conductivity Hall effect and transverse magnetoresistance effect of N type indium antimonide N型锑化铟(InSb)的电导率,霍尔效应和横向磁阻效应