Step channel direct injection ( SCDI ) flash memory device which had been developed changes the hot carrier injection method by making a shallow step in the middle of channel. Therefore high speed for programming, high efficiency for injection, and lower working voltage are obtained. 研制成一种台阶沟道直接注入(SCDI)器件,通过在沟道的中间制作一个浅的台阶来改变热载流子的注入方式,从而获得了高的编程速度和注入效率,降低了工作电压。
Based on the formation theories of interface traps and oxide traps in Si-SiO2, further more the influences of hot carrier injection on 1 / f γ noise are discussed thoroughly. 基于Si/SiO2界面态和氧化层陷阱形成理论,深入讨论了该类器件热载流子注入对1/fγ的影响,提出了用噪声参数S?
A hot carrier injection degradation model for a DSM ( deep submicron ) pMOS device is studied, which is based on the physical model of a degradation gate current. 研究了一种建立在退化栅电流物理解析模型基础上的深亚微米pMOS器件HCI(hotcarrierinjection)退化模型。
MOSFET ′ s Damage Induced by Hot Carrier Injection(HCI) and Its Annealing MOSFET的热载流子损伤及其退火
Effects of Channel Hot - Carrier Injection s in NMOSFET's at 77K 77KNMOSFET沟道热载流子注入效应