Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition ( MOCVD ) with carbon nanotubes as templates in this paper. 通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓(GaN)纳米线束。
Effect of Heat Treatment on the Quality of Gallium Nitride(GaN) Epilayers by MOCVD 热处理对MOCVD外延生长GaN薄膜性能的影响
As wide band gap material, Gallium nitride is used for a variety of optoelectronic devices. 作为第三代宽禁带材料的氮化镓(GaN)被广泛的应用于光电子器件中。
Development of Gallium Nitride(GaN) Thin Films 氮化镓(GaN)薄膜的研究进展
Synthesis and Luminescence of Gallium Nitride(GaN) LED Blue Light Conversion Materials 氮化镓(GaN)发光二级管蓝光转换材料的合成和发光性质