According to the condition of electroneutrality, a general formula of Fermi energy in one-doped semiconductor is deduced. 利用电中性条件,导出了掺单一杂质半导体费米能(FE)级的普适公式,在具体应用时可作相应简。
The electrons that participate in the conduction process are termed free electrons, which have energies greater than the Fermi energy. 参与导电过程的电子,我们称之为自由电子,其能量高于费米能(FE)级。
Something added that lowers value or purity. Numerical Calculation of the Fermi Energy(FE) in Single-Doped and Co-doped Semiconductors 掺杂物,杂质能使原物降低成色、纯度的添加物单掺杂及混合掺杂半导体费米能(FE)级随温度变化的数值计算
Formulae of Fermi Energy(FE) in Poly-doped Semiconductor and Algorithm Computation Effect of number of stages of mixed refrigerant cycle on refrigeration performance 混合杂质半导体费米能(FE)级公式及数值计算混合制冷剂循环的级数对制冷性能的影响
Numerical Calculation of the Fermi Energy(FE) in Single-Doped and Co-doped Semiconductors GRADIENT STRUCTURE OF TLCP / GF / PSF IN-SITU HYBRID COMPOSITES 单掺杂及混合掺杂半导体费米能(FE)级随温度变化的数值计算聚砜基体原位混杂复合材料的梯度结构