A method to exact the electrical parameters and model the second breakdown action of MOSFET's under ESD ( Electro-Static Discharge(ESD) ) on circuit-level, using TCAD simulation, is presented. 采用一种利用TCAD仿真提取MOS器件在静电放电(ESD)现象瞬间大电流情况下的电学参数,对MOS器件二次击穿行为进行电路级宏模块建模。
With the rapid development of electron technology, the harm and potential menace of Electro-Static discharge ( ESD ) to electronic device and system become more serious and difficult to control. 随着电子、微电子应用技术的发展,静电放电(ESD)对电子器件以及系统的伤害和潜在损伤变得日益严重和难以控制。
The interference caused by the traction power supply system on the railway signaling equipments mainly has three aspects : electro-static discharge interference, electromagnetic radiation and conductive interference. 拳引供电系统对铁路通信信号设备的干扰主要有三方面:静电干扰、电磁辐射和传导性干扰。
Failure mechanisms, such as hot-carrier effect ( HCE ), dielectric breakdown, electro-static discharge ( ESD ) and electromigration, pose serious threat to the long-term reliability of VLSI circuits. 热载流子效应(HCE)、电介质击穿、静电放电(ESD),以及电迁移等失效机理,已经对VLSI电路的长期可靠性造成了极大的威胁。
The theory of ESD ( Electro-Static Discharge(ESD) ) equivalent circuit model is introduced in the paper. The electromagnetic fields generated by ESD are simulated by TLM in electromagnetic field. 阐述了静电放电(ESD)的等效电路建模理论,采用基于传输线矩阵法的仿真软件对静电放电(ESD)辐射场进行仿真研究。