Electrochemical characteristics of semiconductor silicon wafers were investigated in dilute hydrofluoric acid solutions using DC polarization and AC impedance techniques under both illuminated and dark conditions. 采用电化学直流极化和交流阻抗技术,在有光照和黑暗条件下分别研究了半导体硅片在稀释氢氟酸溶液中的电化学特性。
Fundamental microstructures such as vertical micro-hole, smooth micro-concave surface and micro-channel are fabricated with a photosensitive glass ( FOTURAN ) employing focused irradiation of near-infrared femtosecond laser, followed by subsequent heat treatment and ultrasonic etching in dilute hydrofluoric acid solution at room temperature. 利用近红外飞秒激光聚焦照射光敏玻璃FOTURAN,经热处理及在稀氢氟酸(DHF)溶液中室温超声腐蚀,制作了竖直微孔、光滑微凹面及微通道等基础微结构。
The FeSO_4 obtained by reduction is purified, adding to NH_4OH-NH_4HCO_3 solution containing organic additives, precipitated and finally washed and then calcined at 900 ℃ for 2 hours. The calcined product is washed using dilute nitric acid and hydrofluoric acid, obtaining high-purity α - Fe_2O_3. 还原后得到的硫酸亚铁经过净化除杂,滴加到含有适量有机添加剂的沉淀剂NH4OH-NH4HCO3中,沉淀洗涤干燥后900℃煅烧2h,煅烧产品再用稀硝酸和氢氟酸洗涤,得到高纯球形-αFe2O3。