In the case of double barrier structure the tunneling probability may still approach 1 under certain conditions. This resonant tunneling effect is the basis of the resonant tunneling diode. 在一定条件下,双势垒结构中电子的隧穿几率甚至可以接近1.利用这种共振隧穿现象可以做成共振隧穿二极管,它的电流-电压特性曲线中会出现负微分电阻。