Using the silver paste and epoxy resin as die bonding materials, two kinds of power LEDs are made. 分析了功率型LED热阻系统的构成,对采用银浆和环氧胶作为芯片键合(D/B)材料的功率型LED热阻进行了对比研究。
Wafer chip scale packaging ( WCSP ) eliminates conventional packaging steps such as die bonding, wire bonding, and die level flip chip attach processes. 晶圆级芯片尺寸封装(WCSP)消除了类似传统的芯片键合(D/B)、引线键合和倒装芯片贴装过程的封装工序。
Compared with the prior art, the mechanical structure greatly enhances the efficiency of the die taking and the die bonding, and can obtain very high precision by setting appropriate parameters. 本机械结构较之现有技术,大大提高了取晶固晶的效率,设置适当的参数,可获得很高的精度。
Failure Mode of Die Bonding(D/B) and Improved Path of Bonding Strength 芯片粘接失效模式及粘接强度提高途径
In the measurement procedures of die bonding process, we apply infrared system to measure the thermal resistance and use bonding tester to estimate the die shear strength. 特性量测选用扫描式超音波显微镜检测黏著状态、稳态红外线热阻量测法检测热阻以及使用推拉力机量测黏著强度,再藉由这些特性量测做性能分析。