Drawing single Ge crystal with large diameter and big diameter ratio of crystal to crucible by means of Czochralski process 切克拉斯基法拉制大晶埚径比大直径锗单晶
Linear Law Governing the Flow of Silicon Melt in the Surface Layer during Czochralski Process(CZ) Control of Oxygen in Ge Doped Si Single Crystal by Czochralski Technique 直拉法(CZ)硅表面层熔体流动所遵循的线性规律直拉法(CZ)生长掺锗硅单晶时氧的控制
Modeling of Czochralski Single Crystal Growth Process Using Neural Network 基于神经网络的提拉法钛单晶生长过程建模
A feedforward multilayer perceptron is used to develop a single-step predictor, modeling the thermal response of the Czochralski single crystal growth process of ilmenite. The training of the neural network is performed using adaptive back-propagation, an accelerated learning algorithm. 建立前馈神经网络预测器,建模提拉法钛晶体生长过程非线性动态特性,用自适应BP算法训练神经网络,以加快网络的学习和收敛。
The effects of the transition metals copper and nickel on oxygen precipitation in Czochralski silicon under a rapid thermal process are investigated. 研究了快速热处理工艺下直拉单晶硅中过渡族金属铜、镍对内吸杂工艺中氧沉淀形成规律的影响。