英语缩略词“CBM”经常作为“Conduction Band Minimum”的缩写来使用,中文表示:“导带最小值”。本文将详细介绍英语缩写词CBM所代表英文单词,其对应的中文拼音、详细解释以及在英语中的流行度。此外,还有关于缩略词CBM的分类、应用领域及相关应用示例等。
“CBM”(“导带最小值)释义
英文缩写词:CBM
英文单词:Conduction Band Minimum
缩写词中文简要解释:导带最小值
中文拼音:dǎo dài zuì xiǎo zhí
缩写词流行度:3677
缩写词分类:Academic & Science
缩写词领域:Electronics
以上为Conduction Band Minimum英文缩略词CBM的中文解释,以及该英文缩写在英语的流行度、分类和应用领域方面的信息。
英文缩略词CBM的扩展资料
The valence band maximum is a flat band; whereas the conduction band minimum is a parabolic band. 能带中价带顶是一条平坦的能带,而导带底为具有抛物线形状的能带。
As one of the most important parameters to characterize the value of semiconductor application, band gap is the energy difference between the valence band maximum and conduction band minimum. 半导体的带隙是表征其应用价值的重要参数之一,它是能带结构中价带顶部到导带底部的能量差值。
Because of Non-degenerate conduction band minimum of ⅲ nitrides, the strain only changed the curvature of the valley, not leading to the subband splitting, and the influence of strain on electron effective mass is less than the Si. 由于Ⅲ族氮化物导带底为非简并的能级,应变仅改变能谷的曲度不会导致能级分裂,因此对电子有效质量的影响要小于Si。
The adsorption of Ag introduces gap states near or below the conduction band minimum and the Fermi level locates next to or merges in the conduction band, which can act as photo-generated electron trap centers and inhibit the recombination of electron-hole pairs. Ag吸附引入隙态位于导带底(CBM)以下,且费米能级同样处于导带底附近,此隙态可以作为光生电子捕获中心阻碍电子空穴对的复合。
The experimental results indicate that the conduction characteristic of BT ceramic exhibit an obvious change at about 80 ℃, from polaron hopping conduction at low temperatures to expanded state band conduction at high temperatures, the resistance reaches its minimum, while the heating power approaches the maximum. 结果显示,BT陶瓷的电导特性在80℃附近出现了明显的转变,从低温时的极化子跳跃导电转变为高温时的能带导电,此时,电阻出现极小值,而加热功率出现极大值。
上述内容是“Conduction Band Minimum”作为“CBM”的缩写,解释为“导带最小值”时的信息,以及英语缩略词CBM所代表的英文单词,其对应的中文拼音、详细解释以及在英语中的流行度和相关分类、应用领域及应用示例等。