Trapped charge buildup during irradiation in buried oxide, which dominantly induces back channel leakage, is investigated. 对诱发背沟道泄漏电流的陷阱电荷进行了研究。
The2-D potential model of partial buried oxide VDMOS is obtained in paper. 提出具有部分埋氧结构的功率VDMOS器件的二维势模型。
And next, MEDICI simulation and a numerical model are utilized to simulate the electric field inside the buried oxide and fraction of hole capture, respectively. 随后分别用MEDICI模拟软件和数值模型模拟掩埋氧化层中的电场强度与空穴俘获率。
Buried oxide isolation process 隐埋氧化物隔离工艺
Substituting the electric field distributions into the formula we ve induced, we got the trapped charge distribution inside the buried oxide during total irradiation under different bias states. 通过对载流子扩散机理的研究,由数学公式的推导,得到陷阱电荷分布随电场变化的函数关系。