Preliminary results in our study of CdTe films grown on Si-Au substrate by electrochemical atomic layer epitaxy were also discussed. 并研究了Si-Au多晶衬底上沉积CdTe的电化学原子层外延(ALE),给出了初步实验结果。
Chemical beam epitaxy, atomic layer epitaxy, migration enhanced epitaxy, selective area epitaxy, laser-assisted epitaxy and low temperature Si epitaxy are new ultrathin epitaxial techniques developed based on molecular beam epitaxy and metallorganic chemical vapor deposition. 化学束外延、原子层外延(ALE)、迁移增强外延、选择区域外延、激光辅助外延和低温Si外延等是在分子束外延和金属有机化学气相沉积基础上发展起来的几种新型超薄层外延技术。
Various growth techniques of ZnO thin films, including magnetro sputtering, chemical vapor deposition, spray pyrolysis, sol gel processing, pulsed laser deposition, molecular beam epitaxy, atomic layer epitaxy and metal organic chemical vapor deposition were reviewed. 详细介绍了各种制备氧化锌薄膜的方法,包括磁控溅射法、化学气相沉积法、喷雾热解法、溶胶凝胶法、激光脉冲沉积法、分子束外延法、原子层外延(ALE)生长法。
Preparation of Bismuth Telluride Thin Film by Electrochemical Atomic Layer Epitaxy(ALE) 电化学生物传感器电化学原子层外延(ALE)法制备碲化铋薄膜
The Bi_2Te_3 thin film deposition on Au substrate using electrochemical atomic layer epitaxy ( ECALE ) is reported in this article. 采用电化学原子层外延(ALE)法(ECALE)在Au电极上成功地制备了Bi2Te3化合物热电薄膜。